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Hyperfine Interaction of Defects in Semiconductors G. Langouche

Hyperfine Interaction of Defects in Semiconductors

G. Langouche

Published December 31st 1992
ISBN : 9780444891341
Hardcover
458 pages
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 About the Book 

The study of defects in semiconductors is of the utmost importance for the field of applied electronics, and for fundamental physics. They play an important role in the electronic properties of the basic material for semiconductor devices, but areMoreThe study of defects in semiconductors is of the utmost importance for the field of applied electronics, and for fundamental physics. They play an important role in the electronic properties of the basic material for semiconductor devices, but are often hard to characterize microscopically and to describe theoretically. The purpose of this book is to present a survey of the various techniques for the study of defects in semiconductors that make use of the hyperfine interaction between the atomic nucleus and the surrounding charge distribution. It also offers an assessment of the status of theory in calculating hyperfine interaction parameters. Written by leading experts in their respective fields, this book will be valuable for researchers and students alike.